Integrated & Bonded Substrates Semiconductor integration
GaN-on-Diamond
Brings gallium nitride (GaN) close to a diamond layer that conducts heat.
Good to know
- “GaN-on-diamond” describes a stack, not one universal fabrication route.
- GaN thickness, supporting layers and the interface need independent definition.
- The material stack alone does not establish finished transistor performance.
Specifications
What we define for GaN-on-diamond, with units and how each is typically measured. We confirm values for your application in technical review.
Request the datasheetLook up a term in the glossaryDimensions & tolerances
| Parameter | Unit | Typical test method |
|---|---|---|
| Lateral size, outline or diameter, and tolerance | mm | Optical measurement |
| Thickness and tolerance (bulk or layer) | mm | Micrometer or optical gauge |
| Thickness uniformity (total thickness variation) | µm | Thickness mapping or interferometry |
| Edge condition and chip limit | Microscopy inspection to drawing |
Crystal & purity
| Parameter | Unit | Typical test method |
|---|---|---|
| Crystalline quality (rocking-curve width) | arcsec | XRD rocking curve |
| Dislocation density | cm⁻² | X-ray topography or etch-pit counting |
Surface & finish
| Parameter | Unit | Typical test method |
|---|---|---|
| Surface roughness per side | nm Ra | Profilometry or AFM |
Metallization & joining
| Parameter | Unit | Typical test method |
|---|---|---|
| Layer sequence and thicknesses (including interlayers) | µm | Cross-section microscopy or per drawing |
| Process temperature budget and thermal cycling | °C | Thermal-cycle test with post-test inspection |
| Bond integrity and bonded area | % | Acoustic microscopy |
Integration & packaging
| Parameter | Unit | Typical test method |
|---|---|---|
| Substrate, carrier or diamond form | Per drawing | |
| Thermal boundary resistance | m²K/W | Time-domain thermoreflectance |
| Wafer bow and warp (including over temperature) | µm | Wafer geometry gauge or profilometry |
| Inspection plan and documentation | Per drawing | |
| Certificate of conformance and traceability | Supplier declaration |
Where it is used
- Computing & Data CentresDense heat and tight package space need a short path to cooling; diamond spreads it.
- Telecom, RF & RadarRF power raises junction temperature; diamond helps carry heat away while interfaces stay reliable.
- Power Electronics & EVsTemperature cycling demands expansion balance and isolation; diamond components help manage the heat.
- Semiconductor EquipmentProcessing demands precision, cleanliness and compatible materials; diamond parts are specified around all three.
Requirement to review
Have a material requirement? Let’s review it.
Share your GaN-on-diamond requirement, dimensions and drawing for review.